Dissociate lattice oxygen redox reactions from capacity and voltage drops of battery electrodes.

The oxygen redox (OR) activity is conventionally considered detrimental to the stability and kinetics of batteries. However, OR reactions are often confused by irreversible oxygen oxidation. Here, based on high-efficiency mapping of resonant inelastic x-ray scattering of both the transition metal and oxygen, we distinguish the lattice OR in Na0.6[Li0.2Mn0.8]O2 and compare it with Na2/3[Mg1/3Mn2/3]O2. Both systems display strong lattice OR activities but with distinct electrochemical stability. The comparison shows that the substantial capacity drop in Na0.6[Li0.2Mn0.8]O2 stems from non-lattice oxygen oxidations, and its voltage decay from an increasing Mn redox contribution upon cycling, contrasting those in Na2/3[Mg1/3Mn2/3]O2. We conclude that lattice OR is not the ringleader of the stability issue. Instead, irreversible oxygen oxidation and the changing cationic reactions lead to the capacity and voltage fade. We argue that lattice OR and other oxygen activities should/could be studied and treated separately to achieve viable OR-based electrodes

How Bulk Sensitive is Hard X-ray Photoelectron Spectroscopy: Accounting for the Cathode-Electrolyte Interface when Addressing Oxygen Redox.

Sensitivity to the "bulk" oxygen core orbital makes hard X-ray photoelectron spectroscopy (HAXPES) an appealing technique for studying oxygen redox candidates. Various studies have reported an additional O 1s peak (530-531 eV) at high voltages, which has been considered a direct signature of the bulk oxygen redox process. Here, we find the emergence of a 530.4 eV O 1s HAXPES peak for three model cathodes-Li2MnO3, Li-rich NMC, and NMC 442-that shows no clear link to oxygen redox. Instead, the 530.4 eV peak for these three systems is attributed to transition metal reduction and electrolyte decomposition in the near-surface region. Claims of oxygen redox relying on photoelectron spectroscopy must explicitly account for the surface sensitivity of this technique and the extent of the cathode degradation layer

Influence of Polymorphism on the Electronic Structure of Ga2O3

The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its fundamental properties beyond the main $\beta$-phase. Here, three polymorphs of Ga$_2$O$_3$, $\alpha$, $\beta$ and $\varepsilon$, are investigated using X-ray diffraction, X-ray photoelectron and absorption spectroscopy, and ab initio theoretical approaches to gain insights into their structure - electronic structure relationships. Valence and conduction electronic structure as well as semi-core and core states are probed, providing a complete picture of the influence of local coordination environments on the electronic structure. State-of-the-art electronic structure theory, including all-electron density functional theory and many-body perturbation theory, provide detailed understanding of the spectroscopic results. The calculated spectra provide very accurate descriptions of all experimental spectra and additionally illuminate the origin of observed spectral features. This work provides a strong basis for the exploration of the Ga$_2$O$_3$ polymorphs as materials at the heart of future electronic device generations.Comment: Updated manuscript version after peer revie

Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3

Transparent conductors are a vital component of smartphones, touch-enabled displays, low emissivity windows and thin film photovoltaics. Tin-doped In2O3 (ITO) dominates the transparent conductive films market, accounting for the majority of the current multi-billion dollar annual global sales. Due to the high cost of indium, however, alternatives to ITO have been sought but have inferior properties. Here we demonstrate that molybdenum-doped In2O3 (IMO) has higher mobility and therefore higher conductivity than ITO with the same carrier density. This also results in IMO having increased infrared transparency compared to ITO of the same conductivity. These properties enable current performance to be achieved using thinner films, reducing the amount of indium required and raw material costs by half. The enhanced doping behavior arises from Mo 4d donor states being resonant high in the conduction band and negligibly perturbing the host conduction band minimum, in contrast to the adverse perturbation caused by Sn 5s dopant states. This new understanding will enable better and cheaper TCOs based on both In2O3 and other metal oxides

Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO2

The metal-insulator transition of NbO2 is thought to be important for the functioning of recent niobium oxide-based memristor devices, and is often described as a Mott transition in these contexts. However, the actual transition mechanism remains unclear, as current devices actually employ electroformed NbOx that may be inherently different to crystalline NbO2. We report on our synchrotron x-ray spectroscopy and density-functional-theory study of crystalline, epitaxial NbO2 thin films grown by pulsed laser deposition and molecular beam epitaxy across the metal-insulator transition at ~810⁰C. The observed spectral changes reveal a second-order Peierls transition driven by a weakening of Nb dimerization without significant electron correlations, further supported by our density-functional-theory modeling. Our findings indicate that employing crystalline NbO2 as an active layer in memristor devices may facilitate analog control of the resistivity, whereby Joule-heating can modulate Nb-Nb dimer distance and consequently control the opening of a pseudogap

Glial Progenitor-Like Phenotype in Low-Grade Glioma and Enhanced CD133-Expression and Neuronal Lineage Differentiation Potential in High-Grade Glioma

Background: While neurosphere-as well as xenograft tumor-initiating cells have been identified in gliomas, the resemblance between glioma cells and neural stem/progenitor cells as well as the prognostic value of stem/progenitor cell marker expression in glioma are poorly clarified. Methodology/Principal Findings: Viable glioma cells were characterized for surface marker expression along the glial genesis hierarchy. Six low-grade and 17 high-grade glioma specimens were flow-cytometrically analyzed for markers characteristics of stem cells (CD133); glial progenitors (PDGFR alpha, A2B5, O4, and CD44); and late oligodendrocyte progenitors (O1). In parallel, the expression of glial fibrillary acidic protein (GFAP), synaptophysin and neuron-specific enolase (NSE) was immunohistochemically analyzed in fixed tissue specimens. Irrespective of the grade and morphological diagnosis of gliomas, glioma cells concomitantly expressed PDGFRa, A2B5, O4, CD44 and GFAP. In contrast, O1 was weakly expressed in all low-grade and the majority of high-grade glioma specimens analyzed. Co-expression of neuronal markers was observed in all high-grade, but not low-grade, glioma specimens analyzed. The rare CD133 expressing cells in low-grade glioma specimens typically co-expressed vessel endothelial marker CD31. In contrast, distinct CD133 expression profiles in up to 90% of CD45-negative glioma cells were observed in 12 of the 17 high-grade glioma specimens and the majority of these CD133 expressing cells were CD31 negative. The CD133 expression correlates inversely with length of patient survival. Surprisingly, cytogenetic analysis showed that gliomas contained normal and abnormal cell karyotypes with hitherto indistinguishable phenotype. Conclusions/Significance: This study constitutes an important step towards clarification of lineage commitment and differentiation blockage of glioma cells. Our data suggest that glioma cells may resemble expansion of glial lineage progenitor cells with compromised differentiation capacity downstream of A2B5 and O4 expression. The concurrent expression of neuronal markers demonstrates that high-grade glioma cells are endowed with multi-lineage differentiation potential in vivo. Importantly, enhanced CD133 expression marks a poor prognosis in gliomas

Comparing Charge Compensation Mechanisms of Li1.3Nb0.3Mn0.4O2 and Li1.3Nb0.3Fe0.4O2 As Novel Cathode Material

Li-rich oxides have generated widespread interest for their use as next generation high energy density Li-ion battery cathodes. Among Li-rich candidates, cation disordered phases are novel lithium intercalation compounds that warrant further fundamental characterization. Here, we compare Li1.3Nb0.3Mn0.4O2 and Li1.3Nb0.3Fe0.4O2 system to explore differences in charge compensation and electrochemical performance. Using Operando XANES/EXAFS measurements examine how the Mn/Fe/Nb local environments and oxidation states change and their effect on electrochemistry. Li1.3Nb0.3Mn0.4O2 displays capacities beyond the traditional transition metal redox (Mn3+/4+), which is considered accessible through oxygen redox. Li1.3Nb0.3Fe0.4O2 exhibits charge capacities at similar potentials to that of anionic redox but our investigations suggest the charge compensation mechanism displays more Fe3+/4+ redox in origin. By using a suite of characterization techniques, we explore the capacity contributions of cation and anionic components in these systems

Could Irradiation Introduce Oxidized Oxygen Signals in Resonant Inelastic X-ray Scattering of Battery Electrodes?

The characterization of oxidized oxygen states through high-efficiency mapping of resonant inelastic X-ray scattering (mRIXS) has become a crucial approach for studying the oxygen redox activities in high-energy battery cathodes. However, this approach has been recently challenged due to the concern of irradiation damage. Here we revisited a typical Li-rich electrode, Li1.144Ni0.136Mn0.544Co0.136O2, in both lithiated and delithiated states and evaluated the X-ray irradiation effect in the lengthy mRIXS experiments. Our results show that irradiation cannot introduce any oxidized oxygen feature, and the features of oxidized oxygen are weakened with a high X-ray dose. The results confirm again that mRIXS detects the intrinsic oxidized oxygen state in battery electrodes. However, the distinct irradiation effects in different systems imply that irradiation could selectively target the least stable elemental or chemical states, which should be analyzed with caution in the study of active chemical states

Could Irradiation Introduce Oxidized Oxygen Signals in Resonant Inelastic X-ray Scattering of Battery Electrodes?

The characterization of oxidized oxygen states through high-efficiency mapping of resonant inelastic X-ray scattering (mRIXS) has become a crucial approach for studying the oxygen redox activities in high-energy battery cathodes. However, this approach has been recently challenged due to the concern of irradiation damage. Here we revisited a typical Li-rich electrode, Li1.144Ni0.136Mn0.544Co0.136O2, in both lithiated and delithiated states and evaluated the X-ray irradiation effect in the lengthy mRIXS experiments. Our results show that irradiation cannot introduce any oxidized oxygen feature, and the features of oxidized oxygen are weakened with a high X-ray dose. The results confirm again that mRIXS detects the intrinsic oxidized oxygen state in battery electrodes. However, the distinct irradiation effects in different systems imply that irradiation could selectively target the least stable elemental or chemical states, which should be analyzed with caution in the study of active chemical states